INVESTIGATION OF DEFECT FORMATION IN BORON ION-IMPLANTED SILICON DURING ANNEALING

被引：4

|

作者：

KOMAROV, FF

KURYAZOV, VD

SOLOVEV, VS

SHIRYAEV, SY

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期

关键词：

D O I：

10.1002/pssa.2210680222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：519 / 529

页数：11

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