STRESS IN THIN FILMS OF SILANE VAPOR-DEPOSITED SILICON DIOXIDE

被引：24

|

作者：

LATHLAEN, R

DIEHL, DA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 05期

关键词：

D O I：

10.1149/1.2411987

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：620 / &

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