共 50 条
- [48] LACK OF BAND-OFFSET TRANSITIVITY FOR SEMICONDUCTOR HETEROJUNCTIONS WITH POLAR ORIENTATION - ZNSE-GE(001), GE-GAAS(001), AND ZNSE-GAAS(001) PHYSICAL REVIEW B, 1994, 50 (16): : 11723 - 11729
- [50] HIGH-GAIN COLLECTOR-TOP GE/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE LAYER FABRICATED BY SUPPRESSING GA ATOM DIFFUSION AT GE/GAAS HETEROJUNCTIONS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08): : 1659 - 1663