SEMICONDUCTOR TRANSISTORS WITH N-GAAS-P+-GE HETEROJUNCTIONS

被引：0
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作者：
AVETISYA.GK
REPNIKOV, GI
MADOYAN, SG
FEDOTOV, YA
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1972年 / 5卷 / 09期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1601 / &
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