SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHING

被引：19
|
作者：
TAKAHASHI, S
MURAI, F
KODERA, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 10期
关键词：
D O I：
10.1109/T-ED.1978.19254
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1213 / 1218
页数：6
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