SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHING

被引：19

|

作者：

TAKAHASHI, S

MURAI, F

KODERA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 10期

关键词：

D O I：

10.1109/T-ED.1978.19254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1213 / 1218

页数：6

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