PIEZORESISTANCE IN N-TYPE SILICON INVERSION LAYERS AT LOW-TEMPERATURES

被引：17

作者：

DORDA, G ^{[1
]}

EISELE, I ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LAB,MUNICH,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 20卷 / 01期

关键词：

D O I：

10.1002/pssa.2210200127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：263 / 273

页数：11

共 21 条

[1]

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MIZE, JP .

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[3] ENERGY-LEVEL DIFFERENCES IN SURFACE QUANTIZATION MEASURED BY PIEZORESISTANCE EFFECT [J].

DORDA, G ;

EISELE, I ;

PREUSS, E .

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[4] PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS [J].

DORDA, G .

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[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

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FANG, FF ;

HOWARD, WE ;

STILES, PJ .

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SOLID-STATE ELECTRONICS, 1971, 14 (07) :639-+

[7] LOW-TEMPERATURE STRAIN SENSITIVITY OF MOS-TRANSISTORS [J].

GAYDON, BG .

SOLID-STATE ELECTRONICS, 1973, 16 (02) :147-154

[8] THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J].

GIBBONS, DF .

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[9] QUANTUM-LIMIT PIEZORESISTANCE OF N-TYPE INVERSION LAYERS OF SILICON AND GERMANIUM [J].

ITO, R .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :735-&

[10]

JOOS G, 1945, LEHRBUCH THEORETISCH

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