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SURFACE CHARGES INDUCED BY MECHANICAL STRESSES IN SILICON-SILICON OXIDE INTERFACE
被引:13
作者
:
FRIEDRICH, H
论文数:
0
引用数:
0
h-index:
0
FRIEDRICH, H
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1971年
/ 14卷
/ 07期
关键词
:
D O I
:
10.1016/0038-1101(71)90139-0
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:639 / +
页数:1
相关论文
共 5 条
[1]
HOFFMANN H, 1969, Z ANGEW PHYSIK, V26, P137
[2]
MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
[J].
JACCODINE, RJ
论文数:
0
引用数:
0
h-index:
0
JACCODINE, RJ
;
SCHLEGEL, WA
论文数:
0
引用数:
0
h-index:
0
SCHLEGEL, WA
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
:2429
-+
[3]
STRESS AT SI-SIO2 INTERFACE AND ITS RELATIONSHIP TO INTERFACE STATES
[J].
LANE, CH
论文数:
0
引用数:
0
h-index:
0
LANE, CH
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1968,
ED15
(12)
:998
-+
[4]
MEASUREMENT OF ELASTIC CONSTANTS AT LOW TEMPERATURES BY MEANS OF ULTRASONIC WAVES - DATA FOR SILICON AND GERMANIUM SINGLE CRYSTALS, AND FOR FUSED SILICA
[J].
MCSKIMIN, HJ
论文数:
0
引用数:
0
h-index:
0
MCSKIMIN, HJ
.
JOURNAL OF APPLIED PHYSICS,
1953,
24
(08)
:988
-997
[5]
RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACE
[J].
WHELAN, MV
论文数:
0
引用数:
0
h-index:
0
WHELAN, MV
;
GOEMANS, AH
论文数:
0
引用数:
0
h-index:
0
GOEMANS, AH
;
GOOSSENS, LM
论文数:
0
引用数:
0
h-index:
0
GOOSSENS, LM
.
APPLIED PHYSICS LETTERS,
1967,
10
(10)
:262
-&
←
1
→
共 5 条
[1]
HOFFMANN H, 1969, Z ANGEW PHYSIK, V26, P137
[2]
MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
[J].
JACCODINE, RJ
论文数:
0
引用数:
0
h-index:
0
JACCODINE, RJ
;
SCHLEGEL, WA
论文数:
0
引用数:
0
h-index:
0
SCHLEGEL, WA
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
:2429
-+
[3]
STRESS AT SI-SIO2 INTERFACE AND ITS RELATIONSHIP TO INTERFACE STATES
[J].
LANE, CH
论文数:
0
引用数:
0
h-index:
0
LANE, CH
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1968,
ED15
(12)
:998
-+
[4]
MEASUREMENT OF ELASTIC CONSTANTS AT LOW TEMPERATURES BY MEANS OF ULTRASONIC WAVES - DATA FOR SILICON AND GERMANIUM SINGLE CRYSTALS, AND FOR FUSED SILICA
[J].
MCSKIMIN, HJ
论文数:
0
引用数:
0
h-index:
0
MCSKIMIN, HJ
.
JOURNAL OF APPLIED PHYSICS,
1953,
24
(08)
:988
-997
[5]
RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACE
[J].
WHELAN, MV
论文数:
0
引用数:
0
h-index:
0
WHELAN, MV
;
GOEMANS, AH
论文数:
0
引用数:
0
h-index:
0
GOEMANS, AH
;
GOOSSENS, LM
论文数:
0
引用数:
0
h-index:
0
GOOSSENS, LM
.
APPLIED PHYSICS LETTERS,
1967,
10
(10)
:262
-&
←
1
→