PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS

被引：91

作者：

DORDA, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.1660486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2053 / &

共 15 条

[1]

BOROFFKA H, PRIVATE COMMUNICATIO

[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J].

COLMAN, D ;

BATE, RT ;

MIZE, JP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :1923-&

[3] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM [J].

DEXTER, RN ;

ZEIGER, HJ ;

LAX, B .

PHYSICAL REVIEW, 1956, 104 (03) :637-644

[4] EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE [J].

DORDA, G .

APPLIED PHYSICS LETTERS, 1970, 17 (09) :406-&

[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

FOWLER, AB ;

FANG, FF ;

HOWARD, WE ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&

[6]

FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331

[7] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].

HERRING, C .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290

[8]

JOOS G, 1945, LEHRBUCH THEORETISCH, P155

[9] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER [J].

KAWAJI, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) :906-&

[10] THE EFFECTS OF ELASTIC DEFORMATION ON THE ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS [J].

KEYES, RW .

SOLID STATE PHYSICS, 1960, 11 :149-221

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