ENERGY-DEPENDENCE OF THE SPUTTERING YIELD OF GALLIUM-ARSENIDE BY ARGON ION-BOMBARDMENT

被引:0
|
作者
BHATTACHARYA, SR [1 ]
GHOSE, D [1 ]
BASU, D [1 ]
机构
[1] SAHA INST NUCL PHYS,BLOCK AF,SECTOR 1,CALCUTTA 700064,INDIA
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:328 / 330
页数:3
相关论文
共 50 条
  • [31] ION-BOMBARDMENT CLEANING OF LIQUID GALLIUM SURFACES
    FINE, J
    HARDY, SC
    ANDREADIS, TD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 1310 - 1311
  • [32] SPUTTERING OF IRON UNDER MOLECULAR ION-BOMBARDMENT
    GHOSE, D
    BASU, D
    KARMOHAPATRO, SB
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1681 - 1682
  • [33] ION-IMPLANTED NITROGEN IN GALLIUM-ARSENIDE
    KACHARE, AH
    KAHAN, A
    EULER, FK
    WHATLEY, TA
    SPITZER, WG
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4393 - 4399
  • [34] CARBON-ION-IMPLANTED GALLIUM-ARSENIDE
    SHIN, BK
    APPLIED PHYSICS LETTERS, 1976, 29 (07) : 438 - 440
  • [35] TRENDS IN ION-IMPLANTATION IN GALLIUM-ARSENIDE
    HARA, T
    INADA, T
    SOLID STATE TECHNOLOGY, 1979, 22 (11) : 69 - 74
  • [36] BEHAVIOR OF TIN IMPLANTED IN INDIUM ARSENIDE BY ION-BOMBARDMENT
    GUSEVA, MI
    ZOTOVA, NV
    KOVAL, AV
    NASLEDOV, DN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1323 - 1323
  • [37] ALUMINUM ION IMPRESSION ONTO GALLIUM-ARSENIDE
    TERADA, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (04) : 756 - &
  • [38] SHALLOW ION-IMPLANTATION IN GALLIUM-ARSENIDE
    GRANGE, JD
    BARTLE, DC
    BROWN, BR
    DINEEN, C
    KNIGHT, KS
    MEDLAND, JD
    WICKENDEN, DK
    DOWSETT, MG
    VACUUM, 1984, 34 (1-2) : 199 - 201
  • [39] ENERGY DEPOSITION IN ION-BOMBARDMENT
    MANNING, I
    MUELLER, GP
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (01): : 56 - 56
  • [40] ENERGY-DEPENDENCE OF EXCITATION IN SPUTTERING
    BHATTACHARYA, RS
    HASSELKAMP, D
    SCHARTNER, KH
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (05) : L55 - L59