IMPURITY-BAND DENSITY OF STATES IN HEAVILY DOPED SEMICONDUCTORS - A VARIATIONAL CALCULATION

被引：36
|
作者：
SAYAKANIT, V [1 ]
GLYDE, HR [1 ]
机构：
[1] UNIV OTTAWA, DEPT PHYS, OTTAWA K1N 6N5, ONTARIO, CANADA
来源：
PHYSICAL REVIEW B | 1980年 / 22卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.22.6222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6222 / 6232
页数：11
相关论文
共 50 条
  • [41] Effects of impurity band in heavily doped ZnO:HCl
    Colibaba, G., V
    Avdonin, A.
    Shtepliuk, I
    Caraman, M.
    Domagala, J.
    Inculet, I.
    PHYSICA B-CONDENSED MATTER, 2019, 553 : 174 - 181
  • [42] The structure of heavily doped impurity band in crystalline host
    Chen, Hongwei
    Hu, Zi-Xiang
    arXiv, 2023,
  • [43] DYNAMIC CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOSENSITIVE LAYER STRUCTURES BASED ON HEAVILY DOPED SI-AS WITH BLOCKED IMPURITY-BAND CONDUCTION
    ZHDAN, AG
    KOZLOV, AM
    KOSTINSKAYA, TA
    KOCHEROV, VF
    RYLKOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (12): : 1139 - 1142
  • [44] LOCAL DENSITY OF STATES OF SILICON IMPURITY IN LIGHTLY AND HEAVILY DOPED ALAS/GAAS SUPERLATTICES
    WANG, EG
    ZHANG, LY
    WANG, HY
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (03): : 371 - 375
  • [45] Analysis of the experimental data for impurity-band conduction in Mn-doped InSb
    Kajikawa, Yasutomo
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 1-2, 2017, 14 (1-2):
  • [46] MANY-BAND IMPURITY STATES IN SEMICONDUCTORS
    HAWTON, MH
    PARANJAPE, VV
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 43 (01): : 121 - +
  • [47] CLUSTER MODEL OF IMPURITY STATES IN DOPED SEMICONDUCTORS
    FERREIRADASILVA, A
    RIKLUND, R
    CHAO, KA
    PROGRESS OF THEORETICAL PHYSICS, 1979, 62 (03): : 584 - 594
  • [48] NATURE OF THE SECONDARY IMPURITY STATES IN HEAVILY DOPED CRYSTALS
    VILKOTSKII, VA
    DOMANEVSKII, DS
    ZHOKHOVETS, SV
    KRASOVSKII, VV
    PROKOPENYA, MV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (09): : 1020 - 1023
  • [49] Monte Carlo simulations of an impurity-band model for III-V diluted magnetic semiconductors
    Kennett, MP
    Berciu, M
    Bhatt, RN
    PHYSICAL REVIEW B, 2002, 66 (04)
  • [50] THEORY OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS WITH OVERLAPPING ELECTRONIC ORBITALS
    MAJLIS, N
    ANDA, E
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (08): : 1607 - 1617
12345