IMPURITY-BAND DENSITY OF STATES IN HEAVILY DOPED SEMICONDUCTORS - A VARIATIONAL CALCULATION

被引：36

作者：

SAYAKANIT, V ^{[1
]}

GLYDE, HR ^{[1
]}

机构：

[1] UNIV OTTAWA, DEPT PHYS, OTTAWA K1N 6N5, ONTARIO, CANADA

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.22.6222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6222 / 6232

页数：11

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