EPITAXIAL-GROWTH OF ERAS ON (100)GAAS

被引:121
|
作者
PALMSTROM, CJ
TABATABAIE, N
ALLEN, SJ
机构
关键词
D O I
10.1063/1.100173
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2608 / 2610
页数:3
相关论文
共 50 条
  • [11] LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON (100) SILICON SUBSTRATES
    CHRISTOU, A
    WILKINS, BR
    TSENG, WF
    ELECTRONICS LETTERS, 1985, 21 (09) : 406 - 408
  • [12] MODEL OF EPITAXIAL-GROWTH OF GAAS ON SI(100) - NUCLEATION AT SURFACE STEPS
    ALERHAND, OL
    KAXIRAS, E
    JOANNOPOULOS, JD
    TURNER, GW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 695 - 699
  • [13] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF (100) HGSE ON GAAS
    BECKER, CR
    HE, L
    EINFELDT, S
    WU, YS
    LERONDEL, G
    HEINKE, H
    OEHLING, S
    BICKNELLTASSIUS, RN
    LANDWEHR, G
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 331 - 334
  • [14] EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES
    SANDS, T
    HARBISON, JP
    CHAN, WK
    SCHWARZ, SA
    CHANG, CC
    PALMSTROM, CJ
    KERAMIDAS, VG
    APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1216 - 1218
  • [15] MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISMS ON THE GAAS(100) SURFACE
    HARBISON, JP
    FARRELL, HH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 733 - 735
  • [16] EPITAXIAL-GROWTH MECHANISM OF THE (100) AS SURFACE OF GAAS - THE EFFECT OF POSITIVE HOLES
    TSUDA, M
    MORISHITA, M
    OIKAWA, S
    MASHITA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (06): : L960 - L963
  • [17] EPITAXIAL-GROWTH OF GE ON GAAS SUBSTRATES
    KRAUTLE, H
    ROENTGEN, P
    BENEKING, H
    JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 439 - 443
  • [18] PROPERTIES OF ALUMINUM EPITAXIAL-GROWTH ON GAAS
    PETROFF, PM
    FELDMAN, LC
    CHO, AY
    WILLIAMS, RS
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7317 - 7320
  • [19] EPITAXIAL-GROWTH OF LATTICE MISMATCHED SRF2 FILMS ON (100) GAAS
    RAO, VJ
    CHAUDHARI, GN
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (03): : 284 - 287
  • [20] EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS/AL/GAAS HETEROSTRUCTURES
    OH, JE
    BHATTACHARYA, PK
    SINGH, J
    DOSPASSOS, W
    CLARKE, R
    MESTRES, N
    MERLIN, R
    CHANG, KH
    GIBALA, R
    SURFACE SCIENCE, 1990, 228 (1-3) : 16 - 19