MODEL OF EPITAXIAL-GROWTH OF GAAS ON SI(100) - NUCLEATION AT SURFACE STEPS

被引：9
|
作者：
ALERHAND, OL
KAXIRAS, E
JOANNOPOULOS, JD
TURNER, GW
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词：
D O I：
10.1116/1.584627
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：695 / 699
页数：5
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