PIEZORESISTANCE CONSTANTS OF P-TYPE INSB

被引：25
|
作者：
TUZZOLINO, AJ
机构：
来源：
PHYSICAL REVIEW | 1958年 / 109卷 / 06期
关键词：
D O I：
10.1103/PhysRev.109.1980
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1980 / 1987
页数：8
相关论文
共 50 条
  • [21] The algorithm for the piezoresistance coefficients of p-type polysilicon
    王健
    揣荣岩
    Journal of Semiconductors, 2016, 37 (08) : 14 - 18
  • [22] PIEZORESISTANCE IN P-TYPE MG2SN
    KAISER, KB
    KEARNEY, RJ
    PHYSICAL REVIEW, 1967, 162 (03): : 716 - &
  • [23] OSCILLATIONS IN COMPENSATED P-TYPE INSB
    GIGIBERI.PG
    KARTSIVA.GA
    KEVANISH.GV
    MIRIANAS.SM
    NANOBASH.DI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1102 - 1103
  • [24] CYCLOTRON RESONANCE IN P-TYPE INSB
    TOHVER, HT
    ASCARELL.G
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (01): : 94 - &
  • [25] INVESTIGATION OF PIEZORESISTANCE AND OF PIEZOHALL EFFECT IN P-TYPE GERMANIUM
    KOZEEV, EV
    KRAVCHENKO, AF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1168 - 1171
  • [26] ELECTRON MOBILITY IN P-TYPE INSB
    BARYSHEV, NS
    SHTIVELM.KY
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 1002 - +
  • [27] RECOMBINATION PROCESSES IN P-TYPE INSB
    VOLKOV, AS
    GALAVANO.VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 129 - &
  • [28] IMPACT IONIZATION IN P-TYPE INSB
    DICK, CL
    ANCKERJO.B
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) : 2151 - &
  • [29] GALVANOMAGNETIC ANISOTROPY OF P-TYPE INSB
    OHMURA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (10) : 1886 - &
  • [30] INVESTIGATION OF PIEZORESISTANCE OF P-TYPE GALLIUM-ARSENIDE
    KOZEEV, EV
    KRAVCHENKO, AF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (06): : 619 - 622
12345