INVESTIGATION OF PIEZORESISTANCE OF P-TYPE GALLIUM-ARSENIDE

被引:0
|
作者
KOZEEV, EV
KRAVCHENKO, AF
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 06期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:619 / 622
页数:4
相关论文
共 50 条
  • [1] DIFFUSION OF P-TYPE DOPANTS IN GALLIUM-ARSENIDE
    DEAL, MD
    ROBINSON, HG
    MURRAY, JJ
    ALLEN, EL
    STEVENSON, DA
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 22 - 22
  • [2] PLASMA RESONANCE ON P-TYPE GALLIUM-ARSENIDE
    PHILBRICK, JW
    PILLUS, CA
    SCHNEIDER, CP
    SOLID STATE TECHNOLOGY, 1973, 16 (04) : 66 - 68
  • [3] SPIN RELAXATION OF PHOTOELECTRONS IN P-TYPE GALLIUM-ARSENIDE
    FISHMAN, G
    LAMPEL, G
    PHYSICAL REVIEW B, 1977, 16 (02) : 820 - 831
  • [4] MODEL FOR THE ACTIVATION AND DIFFUSION OF P-TYPE DOPANTS IN GALLIUM-ARSENIDE
    VANBERLO, WH
    LANDGREN, G
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 569 - 574
  • [5] PHOTOQUENCHING EFFECT AND ITS CONSEQUENCE IN P-TYPE GALLIUM-ARSENIDE
    ECHEVERRIA, R
    VICENT, AB
    JOSHI, NV
    SOLID STATE COMMUNICATIONS, 1984, 52 (11) : 901 - 904
  • [6] PIEZORESISTANCE IN P-TYPE GALLIUM ANTIMONIDE
    AVEROUS, M
    BONNAFE, J
    CALAS, J
    FAU, C
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 227 - 234
  • [7] PIEZORESISTANCE IN P-TYPE GALLIUM ANTIMONIDE
    TUFTE, ON
    STELZER, EL
    PHYSICAL REVIEW, 1964, 133 (5A): : 1450 - +
  • [8] DIFFERENTIAL CAPACITANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODE
    LAFLERE, WH
    CARDON, F
    GOMES, WP
    SURFACE SCIENCE, 1974, 44 (02) : 541 - 552
  • [9] PROPERTIES OF EPITAXIAL P-TYPE GE-DOPED GALLIUM-ARSENIDE
    MALISOVA, YV
    NIKIFOROVA, MP
    KHLUDKOV, SS
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1989, 32 (01): : 65 - 69
  • [10] CHARACTERIZATION OF THE INTRINSIC DOUBLE ACCEPTOR IN UNDOPED P-TYPE GALLIUM-ARSENIDE
    MITCHEL, WC
    BROWN, GJ
    FISCHER, DW
    YU, PW
    LANG, JE
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2320 - 2328