RADIATION EFFECTS IN METAL-INSULATOR-SEMICONDUCTOR CAPACITORS AS DETERMINED FROM CONDUCTANCE MEASUREMENTS

被引：9

|

作者：

PERKINS, CW

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 04期

关键词：

D O I：

10.1063/1.1651933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：153 / +

页数：1

相关论文

共 50 条

[41] PHOTOCAPACITANCE OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE
LEBEDEV, AA
SOBOLEV, NA
ECKE, W
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 832 - 833
[42] Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials
Cheng, Yi-Lung
Peng, Wei-Fan
Huang, Chi-Jia
Chen, Giin-Shan
Fang, Jau-Shiung
MOLECULES, 2023, 28 (03):
[43] Metal-insulator-semiconductor transmission lines
Williams, DF
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (02) : 176 - 181
[44] A BIBLIOGRAPHY OF METAL-INSULATOR-SEMICONDUCTOR STUDIES
SCHLEGEL, ES
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 728 - +
[45] USE OF TRANSIENT MEASUREMENTS IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES TO DETERMINE SEMICONDUCTOR DOPING DENSITIES
WAXMAN, A
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 309 - &
[46] On the annealing effects of GaN metal-insulator-semiconductor capacitors with photo-chemical vapor deposition oxide layers
Chiou, Yu-Zung
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3045 - 3048
[47] ANALYSIS OF INP SCHOTTKY TUNNEL METAL-INSULATOR-SEMICONDUCTOR DIODE CHARACTERISTICS WITH A CONDUCTANCE TECHNIQUE
OUENNOUGHI, Z
BOULKROUN, K
REMY, M
HUGON, R
CUSSENOT, JR
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (05) : 1014 - 1019
[48] Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric
Chiu, FC
Lin, SA
Lee, JYM
MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) : 961 - 964
[49] Photon-assisted capacitance-voltage study of organic metal-insulator-semiconductor capacitors
Watson, Colin P.
Devynck, Melanie
Taylor, D. Martin
ORGANIC ELECTRONICS, 2013, 14 (07) : 1728 - 1736
[50] Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors -: art. no. 223507
Dimoulas, A
Vellianitis, G
Mavrou, G
Evangelou, EK
Sotiropoulos, A
APPLIED PHYSICS LETTERS, 2005, 86 (22) : 1 - 3

← 1 2 3 4 5 →