On the annealing effects of GaN metal-insulator-semiconductor capacitors with photo-chemical vapor deposition oxide layers

被引：0
|
作者：
Chiou, Yu-Zung [1 ]
机构：
[1] So Taiwan Technol, Dept Elect Engn, Tainan 710, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期
关键词：
GaN; photo-CVD; SiO2; MIS capacitors;
D O I：
10.1143/JJAP.45.3045
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN metal-insulator-semicouductor (MIS) capacitors with photo-assisted chemical vapor deposition (photo-CVD) SiO2 as the insulators were fabricated. The annealing effects of these capacitors were also investigated. It was found that we could significantly improve the electrical properties of the capacitors either by an in-situ annealing in O-2 at 400 degrees C or by an ex-situ furnace annealing in N-2 at 800 degrees C. It Was also found that photo-CVD annealing is an effective tool to improve the GaN MIS capacitors at low temperatures.
引用
收藏
页码：3045 / 3048
页数：4
相关论文
共 50 条
  • [1] Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors
    Matocha, K
    Gutmann, RJ
    Chow, TP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (05) : 1200 - 1204
  • [2] METAL-INSULATOR-SEMICONDUCTOR CAPACITORS WITH BISMUTH OXIDE AS INSULATOR
    RAJU, TA
    TALWAI, AS
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4877 - 4878
  • [3] Effect of Annealing on GaN Metal-Insulator-Semiconductor Capacitors by Using Liquid-Phase-Deposition SiO2
    Hwang, J. D.
    Lin, D. C.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (03) : H47 - H49
  • [4] AlInGaN 310 nm ultraviolet metal-insulator-semiconductor sensors with photo-chemical-vapor-deposition SiO2 cap layers
    Chen, Chin-Hsiang
    OPTICAL REVIEW, 2009, 16 (03) : 371 - 374
  • [5] AlInGaN 310 nm ultraviolet metal-insulator-semiconductor sensors with photo-chemical-vapor-deposition SiO2 cap layers
    Chin-Hsiang Chen
    Optical Review, 2009, 16 : 371 - 374
  • [6] Electrical Properties of Metal-Insulator-Semiconductor Capacitors on Freestanding GaN Substrate
    Kim, Eunhee
    Soejima, Narumasa
    Watanabe, Yukihiko
    Ishiko, Masayasu
    Kachi, Tetsu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [7] CHEMICAL VAPOR-DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES
    KAPLAN, E
    BALOG, M
    FROHMANBENTCHKOWSKY, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1570 - 1573
  • [8] Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition
    Lu, Xing
    Ma, Jun
    Jiang, Huaxing
    Liu, Chao
    Lau, Kei May
    APPLIED PHYSICS LETTERS, 2014, 105 (10)
  • [9] Gallium nitride metal-insulator-semiconductor capacitors using low-pressure chemical vapor deposited oxides
    Matocha, K
    Chow, TP
    Gutmann, RJ
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1535 - 1538
  • [10] Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
    Hashizume, T
    Alekseev, E
    Pavlidis, D
    Boutros, KS
    Redwing, J
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) : 1983 - 1986
12345