EXPERIMENTAL INVESTIGATION OF NOISE OF MOS-TRANSISTORS

被引：0

|

作者：

NARYSHKI.AK

GERASIMO.TI

机构：

来源：

TELECOMMUNICATIONS AND RADIO ENGINEERING | 1972年 / 2627卷 / 10期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：124 / 125

页数：2

相关论文

共 50 条

[21] PHOTOREACTIVE EFFECT IN MOS-TRANSISTORS
ODOBETSKY, SI
OSADCHUK, VS
RADIOTEKHNIKA I ELEKTRONIKA, 1989, 34 (11): : 2387 - 2393
[22] INTERFACE STATES IN MOS-TRANSISTORS
BALDINGE.E
SEQUIN, C
ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1969, 20 (04): : 587 - &
[23] TRANSIENT ANALYSIS OF MOS-TRANSISTORS
OH, SY
WARD, DE
DUTTON, RW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1571 - 1578
[24] TRANSIENT ANALYSIS OF MOS-TRANSISTORS
OH, SY
WARD, DE
DUTTON, RW
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 636 - 643
[25] MATCHING PROPERTIES OF MOS-TRANSISTORS
PELGROM, MJM
DUINMAIJER, ACJ
WELBERS, APG
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (05) : 1433 - 1440
[26] INFLUENCE OF THE DEPTH OF INTERFACE STATES INTO THE INSULATOR ON THE NOISE PROPERTIES OF MOS-TRANSISTORS
VIKTOROVITCH, P
GENTIL, P
SOLID-STATE ELECTRONICS, 1979, 22 (01) : 21 - 23
[27] LOW-FREQUENCY NOISE IN DEPLETION-MODE SIMOX MOS-TRANSISTORS
ELEWA, T
BOUKRISS, B
HADDARA, HS
CHOVET, A
CRISTOLOVEANU, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 323 - 327
[28] FLICKER NOISE IN MOS-TRANSISTORS OPERATED AT ROOM AND LIQUID-HELIUM TEMPERATURES
HAFEZ, IM
GHIBAUDO, G
BALESTRA, F
SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (01) : 101 - 104
[29] THEORETICAL AND EXPERIMENTAL STUDY OF MOS-TRANSISTORS NONUNIFORMLY DOPED BY SILOX TECHNIQUE
DOUCET, G
VANDEWIELE, F
JESPERS, P
SOLID-STATE ELECTRONICS, 1976, 19 (03) : 191 - 199
[30] Fabrication of ultrashort vertical MOS-transistors
Aeugle, T
Risch, L
Rosner, W
Schafer, H
Franosch, M
Eller, M
Ramcke, T
ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 561 - 569

← 1 2 3 4 5 →