INTERFACE STATES IN MOS-TRANSISTORS

被引：0

作者：

BALDINGE.E

SEQUIN, C

机构：

来源：

ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK | 1969年 / 20卷 / 04期

关键词：

D O I：

10.1007/BF01595073

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

引用

页码：587 / &

共 50 条

[1] GENERATION OF INTERFACE STATES DURING THE ELECTRICAL STRESSING OF MOS-TRANSISTORS
BHATTACHARYYA, A
SHABDE, SN
PHILIPS JOURNAL OF RESEARCH, 1987, 42 (5-6) : 583 - 592
[2] INFLUENCE OF THE DEPTH OF INTERFACE STATES INTO THE INSULATOR ON THE NOISE PROPERTIES OF MOS-TRANSISTORS
VIKTOROVITCH, P
GENTIL, P
SOLID-STATE ELECTRONICS, 1979, 22 (01) : 21 - 23
[3] CHARACTERIZATION OF INTERFACE STATES IN SUBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES
AUTRAN, JL
SEIGNEUR, F
DELMAS, J
PLOSSU, C
BALLAND, B
JOURNAL DE PHYSIQUE III, 1993, 3 (10): : 1947 - 1961
[4] INSTABILITIES IN MOS-TRANSISTORS
STOJADINOVIC, N
DIMITRIJEV, S
MICROELECTRONICS RELIABILITY, 1989, 29 (03) : 371 - 380
[5] A MODEL FOR MOS-TRANSISTORS
BHATTI, GS
JONES, BK
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IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (06): : 248 - 252
[6] SPATIAL-DISTRIBUTION OF SURFACE-STATES IN MOS-TRANSISTORS
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CHOQUET, C
LUBOWIECKI, V
BALLAND, B
SOLID STATE COMMUNICATIONS, 1988, 65 (10) : 1231 - 1235
[7] MATCHING PROPERTIES OF MOS-TRANSISTORS
PELGROM, MJM
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1991, 305 (03): : 624 - 626
[8] DOSIMETRIC PROPERTIES OF MOS-TRANSISTORS
FRANK, H
PETR, I
JADERNA ENERGIE, 1977, 23 (07): : 258 - 263
[9] PHOTOREACTIVE EFFECT IN MOS-TRANSISTORS
ODOBETSKY, SI
OSADCHUK, VS
RADIOTEKHNIKA I ELEKTRONIKA, 1989, 34 (11): : 2387 - 2393
[10] TRANSIENT ANALYSIS OF MOS-TRANSISTORS
OH, SY
WARD, DE
DUTTON, RW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1571 - 1578

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