ANNEALING OF RADIATION DEFECTS IN N-TYPE SIC(6H) IRRADIATED WITH NEUTRONS

被引：0
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作者：
VEINGER, AI
LEPNEVA, AA
LOMAKINA, GA
MOKHOV, EN
SOKOLOV, VI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 11期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1256 / 1259
页数：4
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