EFFECT OF POLYSILICON GATE PATTERN DOPING SEQUENCE ON GATE OXIDE DEGRADATION

被引：1
|
作者：
TAYLOR, MA
FLOWERS, DL
COSWAY, R
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 11期
关键词：
D O I：
10.1149/1.2100316
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2935 / 2937
页数：3
相关论文
共 50 条
  • [41] The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices
    Innertsberger, G
    Pompl, T
    Kerber, M
    MICROELECTRONICS RELIABILITY, 2001, 41 (07) : 973 - 975
  • [42] Gate oxide loss at the periphery of a metal-oxide-semiconductor field-effect transistor resulting from a polysilicon gate etch with a helicon etch tool
    Kraft, R.
    Krishnan, S.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1995, 13 (06):
  • [43] Gate oxide loss at the periphery of a metal-oxide-semiconductor field-effect transistor resulting from a polysilicon gate etch with a helicon etch tool
    Kraft, R
    Krishnan, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2226 - 2229
  • [44] Effect of Gate-Oxide Degradation on Electrical Parameters of Power MOSFETs
    Karki, Ujjwal
    Peng, Fang Zheng
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (12) : 10764 - 10773
  • [45] The effect of nitrogen in p(+) polysilicon gates on boron penetration into silicon substrate through the gate oxide
    Nakayama, S
    Sakai, T
    1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, : 228 - 229
  • [46] Improving gate oxide integrity of cobalt silicided P-type polysilicon gate using arsenic implantation
    Sun, WT
    Liaw, WW
    Liaw, MC
    Hsieh, KC
    Hsu, CCH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2A): : L89 - L92
  • [47] Improving gate oxide integrity of cobalt silicided p-type polysilicon gate using arsenic implantation
    Natl Tsing-Hua Univ, Hsin-Chu, Taiwan
    Jpn J Appl Phys Part 2 Letter, 2 A (L89-L92):
  • [48] Effect of Hydrogen in the Gate Insulator on the Bottom Gate Oxide TFT
    Park, Sang-Hee Ko
    Ryu, Minki
    Yang, Shinhyuk
    Yoon, Sung Min
    Hwang, Chi-Sun
    JOURNAL OF INFORMATION DISPLAY, 2010, 11 (03) : 113 - 118
  • [49] Surface Charging Induced Gate Oxide Degradation
    Chiang, C. L.
    Cheng, C. M.
    Hsieh, J. Y.
    Liao, J. H.
    Yang, L. W.
    Yang, T. H.
    Chen, K. C.
    Lu, Chih-Yuan
    ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES X, 2012, 187 : 67 - 70
  • [50] ANNEALING OF OXIDE FIXED CHARGES IN SCALED POLYSILICON GATE MOS STRUCTURES
    KAO, DB
    SARASWAT, KC
    MCVITTIE, JP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 918 - 925
12345