EFFECT OF POLYSILICON GATE PATTERN DOPING SEQUENCE ON GATE OXIDE DEGRADATION

被引：1
|
作者：
TAYLOR, MA
FLOWERS, DL
COSWAY, R
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 11期
关键词：
D O I：
10.1149/1.2100316
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2935 / 2937
页数：3
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