SUBMILLIMETER PHOTOCONDUCTIVITY OF EPITAXIAL GALLIUM-ARSENIDE CONTAINING ISOVALENT SB IMPURITIES

被引：0
|
作者：
BERMAN, LV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1004 / 1007
页数：4
相关论文
共 50 条
  • [41] MISFIT DISLOCATIONS AND THE MORPHOLOGY OF GALLIUM ALUMINUM ARSENIDE EPITAXIAL LAYERS GROWN ON GALLIUM-ARSENIDE
    BOOYENS, H
    SMALL, MB
    POTEMSKI, RM
    BASSON, JH
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4328 - 4329
  • [42] THE INFLUENCE OF ISOELECTRONIC IMPURITIES ON INTRINSIC DEEP LEVELS IN LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE
    KALUKHOV, VA
    CHIKICHEV, SI
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 88 (01): : K59 - K61
  • [43] INVESTIGATION OF TRANSITIONAL LAYERS IN EPITAXIAL GALLIUM-ARSENIDE - INFLUENCE OF SUBSTRATE TREATMENT ON DISTRIBUTION OF ELECTRONS AND IMPURITIES
    LAVRENTE.LG
    VILISOVA, MD
    KATAEV, YG
    RUMYANTSEV, YM
    SHUMKOV, AD
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (05): : 138 - 139
  • [44] SURFACE SEGREGATION OF ALKALINE IMPURITIES IMPLANTED IN GALLIUM-ARSENIDE
    ALEXANDRE, F
    JOURNAL DE PHYSIQUE, 1978, 39 (06): : 701 - 710
  • [45] MAGNETIC-SUSCEPTIBILITY OF CHROMIUM IMPURITIES IN GALLIUM-ARSENIDE
    BRODOVOI, AV
    BRODOVOI, VA
    LASHKAREV, GV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (09): : 1053 - 1054
  • [46] IONIZATION ENERGIES OF SUBSTITUTIONAL DONOR IMPURITIES IN GALLIUM-ARSENIDE
    BAZHENOV, VK
    SOLOSHENKO, VI
    FOIGEL, MG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1432 - 1434
  • [47] INVESTIGATION OF NEUTRAL STATE OF COBALT IMPURITIES IN GALLIUM-ARSENIDE
    ANDRIANOV, DG
    SAVELEV, AS
    SUCHKOVA, NI
    RASHEVSKAYA, EP
    FILIPPOV, MA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 858 - 860
  • [48] SUPRALINEAR PHOTOCONDUCTIVITY OF COPPER-DOPED SEMIINSULATING GALLIUM-ARSENIDE
    SCHOENBACH, KH
    JOSHI, RP
    PETERKIN, F
    DRUCE, RL
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5208 - 5214
  • [49] DETERMINATION OF TRACE IMPURITIES IN GALLIUM AND GALLIUM-ARSENIDE BY NEUTRON ACTIVATION ANALYSIS
    NEEB, KH
    STOCKERT, H
    BRAUN, R
    BLEICH, HP
    ZEITSCHRIFT FUR ANALYTISCHE CHEMIE FRESENIUS, 1969, 245 (04): : 233 - &
  • [50] INTERNAL QUANTUM EFFICIENCY OF IMPURITY PHOTOCONDUCTIVITY IN SEMIINSULATING GALLIUM-ARSENIDE
    VAKULENKO, OV
    SKRYSHEVSKII, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01): : 106 - 107
12345