INVESTIGATION OF TRANSITIONAL LAYERS IN EPITAXIAL GALLIUM-ARSENIDE - INFLUENCE OF SUBSTRATE TREATMENT ON DISTRIBUTION OF ELECTRONS AND IMPURITIES

被引：0
|
作者：
LAVRENTE.LG
VILISOVA, MD
KATAEV, YG
RUMYANTSEV, YM
SHUMKOV, AD
机构：
[1] VD KUZNETSOV ENGN PHYS INST, TOMSK, USSR
[2] ACAD SCI USSR, INORG CHEM INST, NOVOSIBIRSK, USSR
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1973年 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：138 / 139
页数：2
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