DEEP MELTING OF SILICON-WAFERS

被引：0
|
作者：
WILSON, LO
CELLER, GK
TRIMBLE, LE
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 02期
关键词：
D O I：
10.1149/1.2108584
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
12
引用
收藏
页码：383 / 389
页数：7
相关论文
共 50 条
  • [21] RAPID ISOTHERMAL PROCESSING OF SILICON-WAFERS
    GILL, SS
    PHYSICS IN TECHNOLOGY, 1986, 17 (06): : 245 - &
  • [22] TRANSPORT OF EXCESS CARRIERS IN SILICON-WAFERS
    KUNST, M
    SANDERS, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) : 51 - 59
  • [23] PREOXIDATION UV TREATMENT OF SILICON-WAFERS
    RUZYLLO, J
    DURANKO, GT
    HOFF, AM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) : 2052 - 2055
  • [24] PHOTOACOUSTIC MEASUREMENTS OF DOPED SILICON-WAFERS
    AMATO, G
    BENEDETTO, G
    SPAGNOLO, R
    TURNATURI, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (02): : 519 - 523
  • [25] ULTRATHIN FILMS OF CELLULOSE ON SILICON-WAFERS
    SCHAUB, M
    WENZ, G
    WEGNER, G
    STEIN, A
    KLEMM, D
    ADVANCED MATERIALS, 1993, 5 (12) : 919 - 922
  • [26] PARALLELISM IMPROVEMENT OF GROUND SILICON-WAFERS
    MATSUI, S
    HORIUCHI, T
    JOURNAL OF ENGINEERING FOR INDUSTRY-TRANSACTIONS OF THE ASME, 1991, 113 (01): : 25 - 28
  • [27] INTERFEROMETRIC FLATNESS TESTING OF SILICON-WAFERS
    FEITSCHER, R
    FRITZ, H
    KORNER, K
    FRINGE 89: PROCEEDINGS OF THE 1ST INTERNATIONAL WORKSHOP ON AUTOMATIC PROCESSING OF FRINGE PATTERNS, 1989, 10 : 57 - 61
  • [28] HYDROPHILICITY OF SILICON-WAFERS FOR DIRECT BONDING
    KISSINGER, G
    KISSINGER, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 123 (01): : 185 - 192
  • [29] CARRIER LIFETIME MEASUREMENTS IN SILICON-WAFERS
    GHOSH, AK
    TIEDJE, T
    HABERMAN, JI
    FRANCIS, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C86 - C86
  • [30] TESTING FOR OXYGEN PRECIPITATION IN SILICON-WAFERS
    不详
    SOLID STATE TECHNOLOGY, 1987, 30 (03) : 85 - 89
12345