NEW INTERPRETATION OF ANGULAR-RESOLVED PHOTOEMISSION MEASUREMENTS FROM CLEAVED SILICON

被引：33
作者：
CIRACI, S
BATRA, IP
机构：
[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
[2] IBM CORP,RES INST,SAN JOSE,CA 95193
来源：
SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 08期
关键词：
D O I：
10.1016/0038-1098(76)91262-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1149 / 1152
页数：4
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