BOND ORBITAL MODEL INVESTIGATION OF SURFACE ELECTRONIC-ENERGY STRUCTURE OF SI(111)

被引：19

作者：

CIRACI, S

BATRA, IP

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

[2] IBM CORP,RES LAB,SAN JOSE,CA 95193

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 16卷 / 12期

关键词：

D O I：

10.1016/0038-1098(75)90849-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1375 / 1378

页数：4

共 14 条

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[2]

BATRA IP, TO BE PUBLISHED

[3]

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[4]

CIRACI S, 1974, THESIS STANFORD U

[5]

CIRACI S, TO BE PUBLISHED

[6]

DAVISON SG, 1970, SOLID STATE PHYSICS, V25

[7] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[8] SURFACE STATE BAND ON GAAS (110) FACE [J].

GREGORY, PE ;

SPICER, WE ;

CIRACI, S ;

HARRISON, WA .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514

[9] ELECTRON PARAMAGNETIC RESONANCE FROM CLEAN SINGLE-CRYSTAL CLEAVAGE SURFACES OF SILICON [J].

HANEMAN, D .

PHYSICAL REVIEW, 1968, 170 (03) :705-&

[10] BOND-ORBITAL MODEL .2. [J].

HARRISON, WA ;

CIRACI, S .

PHYSICAL REVIEW B, 1974, 10 (04) :1516-1527

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