ELECTRON PARAMAGNETIC RESONANCE FROM CLEAN SINGLE-CRYSTAL CLEAVAGE SURFACES OF SILICON

被引：157
作者：
HANEMAN, D
机构：
来源：
PHYSICAL REVIEW | 1968年 / 170卷 / 03期
关键词：
D O I：
10.1103/PhysRev.170.705
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：705 / &
相关论文
共 32 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J].
ASPNES, DE ;
HANDLER, P .
SURFACE SCIENCE, 1966, 4 (04) :353-&
[3]   ELECTRON PARAMAGNETIC RESONANCE STUDY ON SILICON GERMANIUM AND GALLIUM ARSENIDE SURFACES INTERACTING WITH ADSORBED OXYGEN [J].
CHAN, P ;
STEINEMA.A .
SURFACE SCIENCE, 1966, 5 (03) :267-&
[4]   PROPERTIES OF CLEAN SILICON SURFACES BY PARAMAGNETIC RESONANCE [J].
CHUNG, MF ;
HANEMAN, D .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1879-&
[5]   THEORY OF THE EFFECT OF SPIN-ORBIT COUPLING ON MAGNETIC RESONANCE IN SOME SEMICONDUCTORS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1954, 96 (02) :266-279
[6]   ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].
FEHER, G .
PHYSICAL REVIEW, 1959, 114 (05) :1219-1244
[7]   ATOMIC MATING OF GERMANIUM SURFACES [J].
HANEMAN, D ;
ROOTS, WD ;
GRANT, JTP .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2203-&
[8]   SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].
HANEMAN, D .
PHYSICAL REVIEW, 1961, 121 (04) :1093-&
[9]   TEAR MARKS ON CLEAVED GERMANIUM SURFACES [J].
HANEMAN, D ;
PUGH, EN .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2269-&
[10]   INTERPRETATION OF LOW ENERGY ELECTRON DIFFRACTION DATA TO PREDICT SURFCE ATOM ARRANGEMENTS [J].
HANSEN, NR ;
HANEMAN, D .
SURFACE SCIENCE, 1964, 2 :566-574
1234