PROPERTIES OF CLEAN SILICON SURFACES BY PARAMAGNETIC RESONANCE

被引:70
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CHUNG, MF
HANEMAN, D
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10.1063/1.1708618
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O59 [应用物理学];
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页码:1879 / &
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共 17 条
[1]   ATOMIC VIEW OF ADSORPTION [J].
EHRLICH, G .
BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (04) :349-+
[2]   APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161
[3]   ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].
FEHER, G .
PHYSICAL REVIEW, 1959, 114 (05) :1219-1244
[4]   SPIN RESONANCE OF DONORS IN SILICON [J].
FLETCHER, RC ;
YAGER, WA ;
PEARSON, GL ;
HOLDEN, AN ;
READ, WT ;
MERRITT, FR .
PHYSICAL REVIEW, 1954, 94 (05) :1392-1393
[5]  
FLETCHER RC, 1956, B AM PHYS SOC, V1, P125
[6]  
FULLER CS, 1954, PHYS REV, V96, pA833
[7]  
HANEMAN D, TO BE PUBLISHED
[8]   INTERPRETATION OF LOW ENERGY ELECTRON DIFFRACTION DATA TO PREDICT SURFCE ATOM ARRANGEMENTS [J].
HANSEN, NR ;
HANEMAN, D .
SURFACE SCIENCE, 1964, 2 :566-574
[9]   PARAMAGNETIC CENTERS PRODUCED AT SILICON SURFACE BY HEAT-TREATMENT IN ATMOSPHERE CONTAINING NO OXYGEN [J].
KUSUMOTO, H ;
SHOJI, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) :1678-&
[10]   STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].
LANDER, JJ ;
GOBELL, GW ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+