共 50 条
- [21] DEFECT DENSITY AND HYDROGEN-BONDING IN HYDROGENATED AMORPHOUS-SILICON AS FUNCTIONS OF SUBSTRATE-TEMPERATURE AND DEPOSITION RATE PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1992, 65 (05): : 1025 - 1040
- [22] THE DEPENDENCE OF FIELD-EFFECT MOBILITIES ON SUBSTRATE-TEMPERATURE FOR AMORPHOUS-SILICON DEPOSITION FOR AMORPHOUS-SILICON THIN-FILM TRANSISTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2010 - L2012
- [28] EFFECT OF DEPOSITION TEMPERATURE ON THE PROPERTIES OF MAGNETRON SPUTTERED HYDROGENATED AMORPHOUS-SILICON FILMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (08): : 1320 - 1322
- [29] ON THE THERMOELASTIC PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON MATERIALS SCIENCE AND ENGINEERING, 1981, 49 (02): : 127 - 132