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- [2] HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED AT HIGH SUBSTRATE-TEMPERATURE - PROPERTIES AND LIGHT-INDUCED DEGRADATIONJOURNAL OF APPLIED PHYSICS, 1993, 73 (11) : 7435 - 7440BANERJEE, RGHOSH, SCHATTOPADHYAY, SBANDYOPADHYAY, AKCHAUDHURI, PBATABYAL, AKBARUA, AK
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- [6] THE PHYSICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICONPHYSICA SCRIPTA, 1986, T13 : 45 - 52WINTERLING, GMULLER, G
- [7] EFFECT OF SUBSTRATE-TEMPERATURE ON PROPERTIES OF GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICONJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (10): : 1278 - 1286SHIRAFUJI, JKUWAGAKI, MSATO, TINUISHI, Y
- [8] ANOMALOUS DEPOSITION RATE DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON ON SUBSTRATE-TEMPERATUREJOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 3060 - 3061ISHIHARA, SKITAGAWA, MHIRAO, T
- [9] SUBSTRATE-TEMPERATURE EFFECT ON THE STABILITY OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED AT HIGH-RATESJOURNAL OF APPLIED PHYSICS, 1995, 78 (01) : 317 - 320KLEIDER, JPLONGEAUD, CBARRANCODIAZ, MMORIN, PCABARROCAS, PRI
- [10] DIFFERENCES IN PHYSICAL-PROPERTIES OF HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON CARBIDE PREPARED BY REACTIVE SPUTTERINGJOURNAL OF APPLIED PHYSICS, 1992, 71 (11) : 5641 - 5645DEMICHELIS, FPIRRI, CFTRESSO, ESTAPINSKI, T