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- [21] PROPERTIES OF AMORPHOUS-SILICON NITRIDE PREPARED AT HIGH DEPOSITION RATE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L469 - L471
- [23] PHOTOCONDUCTIVITY OF AMORPHOUS HYDROGENATED SILICON FORMED BY HF DECOMPOSITION OF SILANE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 984 - 985
- [24] INFLUENCE OF HYDROGEN-BONDING CONFIGURATIONS ON THE PHYSICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PHYSICAL REVIEW B, 1994, 50 (24): : 18046 - 18053
- [26] CRYSTALLIZATION OF PHOSPHORUS-DOPED AMORPHOUS-SILICON FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION OF SILANE REVUE DE PHYSIQUE APPLIQUEE, 1981, 16 (12): : 657 - 662
- [28] SUBSTRATE-TEMPERATURE DEPENDENCE OF ELECTRON-DRIFT MOBILITY IN GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L184 - L186
- [29] DEFECT DENSITY AND HYDROGEN-BONDING IN HYDROGENATED AMORPHOUS-SILICON AS FUNCTIONS OF SUBSTRATE-TEMPERATURE AND DEPOSITION RATE PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1992, 65 (05): : 1025 - 1040