ASYMMETRICAL CHARACTERISTICS OF LIGHTLY-DOPED DRAIN MOSFETS

被引：2
|
作者：
LIU, BD
CHIEN, IK
机构：
[1] Department of Electrical Engineering, National Cheng Kung University, Tainan
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1991年 / 70卷 / 01期
关键词：
D O I：
10.1080/00207219108921260
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Asymmetrical and degraded characteristics of drain-source non-overlap LDD MOSFETs resulting from shadowing effects are observed. The substrate and gate current behaviour are explained by two-dimensional simulation of the channel electric field. The lifetime of LDD devices is also tested and compared with conventional MOSFETs. The non-overlap degree and location affect the operation performance as well as the device lifetime. Experiments show that devices with source non-overlap are worse than those with drain non-overlap.
引用
收藏
页码：101 / 109
页数：9
相关论文
共 50 条
  • [41] Charge transport properties of lightly-doped cuprates: Behavior of the Hall coefficient
    Ando, Y
    Segawa, K
    Lavrov, AN
    Komiya, S
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2003, 131 (5-6) : 793 - 801
  • [42] AC COMPLEX CONDUCTIVITY OF LIGHTLY-DOPED POLY-3-METHYLTHIOPHENE
    PARNEIX, JP
    ELKADIRI, M
    TOURILLON, G
    SYNTHETIC METALS, 1988, 25 (03) : 299 - 310
  • [43] AN ASYMMETRICAL LIGHTLY DOPED DRAIN (LDD) SELF-ALIGNED GATE HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR
    AKINWANDE, AI
    VOLD, PJ
    GRIDER, DE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2450 - 2451
  • [44] Crystallographic features in lightly-doped La1-xSrxMnO3
    Arao, M
    Ueno, T
    Asada, T
    Koyama, Y
    Minamisawa, C
    Mogi, M
    Inoue, Y
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2004, 412 : 171 - 177
  • [45] An analytical model for the effect of graded gate oxide on the channel electric field in MOSFETs with lightly doped drain structure
    Kim, JS
    Seo, KS
    Yoo, HJ
    SOLID-STATE ELECTRONICS, 1997, 41 (04) : 650 - 654
  • [46] Hydrodynamic simulation of electron heating in conventional and lightly-doped-drain MOSFETs with application to substrate current calculation
    Chai, Kam-Wing
    Mawby, P.A.
    McCowen, A.
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 1992, 5 (01) : 53 - 66
  • [47] Charge Transport Properties of Lightly-Doped Cuprates: Behavior of the Hall Coefficient
    Yoichi Ando
    Kouji Segawa
    A. N. Lavrov
    Seiki Komiya
    Journal of Low Temperature Physics, 2003, 131 : 793 - 801
  • [48] A test structure to analyze highly-doped-drain and lightly-doped-drain in CMOSFET
    Ohzone, Takashi
    Okada, Kazuhiko
    Morishita, Takayuki
    Komoku, Kiyotaka
    Matsuda, Toshihiro
    Iwata, Hideyuki
    IEICE TRANSACTIONS ON ELECTRONICS, 2006, E89C (09): : 1351 - 1357
  • [49] DEGRADATION MECHANISM OF LIGHTLY DOPED DRAIN (LDD) N-CHANNEL MOSFETS STUDIED BY ULTRAVIOLET-LIGHT IRRADIATION
    SAITOH, M
    SHIBATA, H
    MOMOSE, H
    MATSUNAGA, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2463 - 2466
  • [50] Incommensurate spin correlations in lightly-doped La2-xSrxCuO4
    Matsuda, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2000, 69 : 10 - 15
12345