ASYMMETRICAL CHARACTERISTICS OF LIGHTLY-DOPED DRAIN MOSFETS

被引：2
|
作者：
LIU, BD
CHIEN, IK
机构：
[1] Department of Electrical Engineering, National Cheng Kung University, Tainan
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1991年 / 70卷 / 01期
关键词：
D O I：
10.1080/00207219108921260
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Asymmetrical and degraded characteristics of drain-source non-overlap LDD MOSFETs resulting from shadowing effects are observed. The substrate and gate current behaviour are explained by two-dimensional simulation of the channel electric field. The lifetime of LDD devices is also tested and compared with conventional MOSFETs. The non-overlap degree and location affect the operation performance as well as the device lifetime. Experiments show that devices with source non-overlap are worse than those with drain non-overlap.
引用
收藏
页码：101 / 109
页数：9
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