FABRICATION OF NANOSTRUCTURES IN STRAINED INGAAS/GAAS QUANTUM-WELLS BY FOCUSED-ION-BEAM IMPLANTATION

被引：30
|
作者：
ALLARD, LB
AERS, GC
CHARBONNEAU, S
JACKMAN, TE
WILLIAMS, RL
TEMPLETON, IM
BUCHANAN, M
STEVANOVIC, D
ALMEIDA, FJD
机构：
[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA
[2] MCMASTER UNIV,ACCELERATOR LAB,HAMILTON L8S 4M1,ONTARIO,CANADA
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 02期
关键词：
D O I：
10.1063/1.351870
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focused-ion-beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism was derived to estimate the indium concentration and the degree of interdiffusion of the QWs from the observed shifts in PL transition energies. A study of nanostructures indicated that the lateral extent of compositional disordering was significantly larger than predicted from the lateral spreading of the ion beam.
引用
收藏
页码：422 / 428
页数：7
相关论文
共 50 条
  • [31] ROOM-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED QUANTUM-WELLS OF INGAAS GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    MARTELLI, F
    PROIETTI, MG
    SIMEONE, MG
    BRUNI, MR
    ZUGARINI, M
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 539 - 541
  • [32] IMPROVED PHOTOLUMINESCENCE PROPERTIES OF HIGHLY STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    KUDO, M
    MISHIMA, T
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1685 - 1688
  • [33] INTERDIFFUSION OF INGAAS/INP QUANTUM-WELLS BY GERMANIUM ION-IMPLANTATION
    BRADLEY, MA
    JULIEN, FH
    GILLES, JP
    GAO, Y
    RAO, EVK
    RAZEGHI, M
    OMNES, F
    ELECTRONICS LETTERS, 1990, 26 (03) : 208 - 210
  • [34] CARRIER RECOMBINATION RATES IN STRAINED-LAYER INGAAS-GAAS QUANTUM-WELLS
    CHEN, YC
    WANG, P
    COLEMAN, JJ
    BOUR, DP
    LEE, KK
    WATERS, RG
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1451 - 1454
  • [35] OPTICAL-PROPERTIES OF STRAINED ASYMMETRIC TRIANGULAR INGAAS/GAAS MULTIPLE QUANTUM-WELLS
    DROOPAD, R
    CHOI, KY
    PUECHNER, RA
    SHIRALAGI, KT
    GERBER, DS
    MARACAS, GN
    APPLIED PHYSICS LETTERS, 1991, 59 (18) : 2308 - 2310
  • [36] LUMINESCENCE POLARIZATION DYNAMICS AND SPIN RELAXATION OF EXCITONS IN STRAINED INGAAS/GAAS QUANTUM-WELLS
    AMAND, T
    RAZDOBREEV, I
    DAREYS, B
    MARIE, X
    BAYLAC, B
    BARRAU, J
    BROUSSEAU, M
    DUNSTAN, D
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1994, 58 (07): : 163 - 167
  • [37] EXCITON OPTICAL-ABSORPTION IN DISORDERED, STRAINED INGAAS/GAAS SINGLE QUANTUM-WELLS
    MICALLEF, J
    LI, EH
    WEISS, BL
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (03) : 315 - 322
  • [38] PHOTOCURRENT SPECTROSCOPY OF STRAINED-LAYER INGAAS-GAAS MULTIPLE QUANTUM-WELLS
    FANG, XM
    SHEN, XC
    HOU, HQ
    FENG, W
    ZHOU, JM
    KOCH, F
    SURFACE SCIENCE, 1990, 228 (1-3) : 351 - 355
  • [39] Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates
    Cho, S
    Majerfeld, A
    Sánchez, JJ
    Muñoz, E
    Tijero, JMG
    Izpura, JI
    MICROELECTRONICS JOURNAL, 2002, 33 (07) : 531 - 534
  • [40] DOSE-RATE EFFECTS IN FOCUSED-ION-BEAM IMPLANTATION OF SI INTO GAAS
    LEZEC, HJ
    MUSIL, CR
    MELNGAILIS, J
    MAHONEY, LJ
    WOODHOUSE, JD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (05): : 2709 - 2713
12345