FABRICATION OF NANOSTRUCTURES IN STRAINED INGAAS/GAAS QUANTUM-WELLS BY FOCUSED-ION-BEAM IMPLANTATION

被引：30
|
作者：
ALLARD, LB
AERS, GC
CHARBONNEAU, S
JACKMAN, TE
WILLIAMS, RL
TEMPLETON, IM
BUCHANAN, M
STEVANOVIC, D
ALMEIDA, FJD
机构：
[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA
[2] MCMASTER UNIV,ACCELERATOR LAB,HAMILTON L8S 4M1,ONTARIO,CANADA
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 02期
关键词：
D O I：
10.1063/1.351870
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focused-ion-beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism was derived to estimate the indium concentration and the degree of interdiffusion of the QWs from the observed shifts in PL transition energies. A study of nanostructures indicated that the lateral extent of compositional disordering was significantly larger than predicted from the lateral spreading of the ion beam.
引用
收藏
页码：422 / 428
页数：7
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