FABRICATION OF NANOSTRUCTURES IN STRAINED INGAAS/GAAS QUANTUM-WELLS BY FOCUSED-ION-BEAM IMPLANTATION

被引：30
|
作者：
ALLARD, LB
AERS, GC
CHARBONNEAU, S
JACKMAN, TE
WILLIAMS, RL
TEMPLETON, IM
BUCHANAN, M
STEVANOVIC, D
ALMEIDA, FJD
机构：
[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA
[2] MCMASTER UNIV,ACCELERATOR LAB,HAMILTON L8S 4M1,ONTARIO,CANADA
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 02期
关键词：
D O I：
10.1063/1.351870
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focused-ion-beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism was derived to estimate the indium concentration and the degree of interdiffusion of the QWs from the observed shifts in PL transition energies. A study of nanostructures indicated that the lateral extent of compositional disordering was significantly larger than predicted from the lateral spreading of the ion beam.
引用
收藏
页码：422 / 428
页数：7
相关论文
共 50 条
  • [1] FOCUSED-ION-BEAM IMPLANTATION IN STRAINED INGAAS-GAAS QUANTUM-WELLS
    ALLARD, LB
    AERS, GC
    CHARBONNEAU, S
    JACKMAN, TE
    TEMPLETON, IM
    BUCHANAN, M
    CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 1023 - 1026
  • [2] THE EFFECT OF GALLIUM IMPLANTATION ON THE INTERMIXING OF INGAAS/GAAS STRAINED QUANTUM-WELLS
    GILLIN, WP
    BRADLEY, IV
    HOMEWOOD, KP
    WEBB, RP
    SOLID STATE COMMUNICATIONS, 1993, 85 (03) : 197 - 198
  • [3] FABRICATION OF PERIODIC STRUCTURES IN GAAS BY FOCUSED-ION-BEAM IMPLANTATION
    SHIOKAWA, T
    ISHIBASHI, K
    KIM, PH
    AOYAGI, Y
    TOYODA, K
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (12): : 2864 - 2867
  • [4] PARTIAL INTERMIXING OF STRAINED INGAAS/GAAS QUANTUM-WELLS
    MELMAN, P
    KOTELES, ES
    ELMAN, B
    ARMIENTO, CA
    OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 (07) : S981 - S984
  • [5] COMPOSITIONAL DISORDERING OF STRAINED INGAAS GAAS QUANTUM-WELLS BY AU IMPLANTATION - CHANNELING EFFECTS
    JACKMAN, TE
    CHARBONNEAU, S
    ALLARD, LB
    WILLIAMS, RL
    TEMPLETON, IM
    BUCHANAN, M
    VOS, M
    MITCHELL, IV
    JACKMAN, JA
    APPLIED PHYSICS LETTERS, 1991, 59 (21) : 2733 - 2735
  • [6] The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching
    Sievila, Paivi
    Chekurov, Nikolai
    Tittonen, Ilkka
    NANOTECHNOLOGY, 2010, 21 (14)
  • [7] SPIN RELAXATION OF EXCITONS IN STRAINED INGAAS/GAAS QUANTUM-WELLS
    DAREYS, B
    AMAND, T
    MARIE, X
    BAYLAC, B
    BARRAU, J
    BROUSSEAU, M
    RAZDOBREEV, I
    DUNSTAN, DJ
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 351 - 354
  • [8] OPTICAL STUDIES OF STRAINED INGAAS/GAAS SINGLE QUANTUM-WELLS
    SHEN, WZ
    TANG, WG
    LI, ZY
    SHEN, XC
    WANG, SM
    ANDERSSON, T
    APPLIED SURFACE SCIENCE, 1994, 78 (03) : 315 - 320
  • [9] Fabrication of quantum wires by Ga focused-ion-beam implantation and their transport properties
    Nakata, Syunji
    Yamada, Syoji
    Hirayama, Yoshiro
    Saku, Tadashi
    Horikoshi, Yoshiji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1990, 29 (01): : 48 - 52
  • [10] ELECTRICAL TRANSPORT OF HOLES IN GAAS/INGAAS/GAAS SINGLE STRAINED QUANTUM-WELLS
    FRITZ, IJ
    DRUMMOND, TJ
    OSBOURN, GC
    SCHIRBER, JE
    JONES, ED
    APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1678 - 1680
12345