ZnTe/CdTe THIN-FILM HETEROJUNCTIONS

被引：0
|
作者：
Kolesnyk, M. M. [1 ]
Opanasyuk, A. S. [1 ]
Tyrkusova, N. V. [1 ]
Danilchenko, S. N. [2 ]
机构：
[1] Sumy State Univ, 2 Rimsky Korsakov Str, UA-40007 Sumy, Ukraine
[2] Natl Acad Sci Ukraine, Inst Appl Phys, UA-40030 Sumy, Ukraine
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2009年 / 1卷 / 02期
关键词：
ZnTe/CdTe HETEROJUNCTIONS; STRUCTURE FACTOR; GRAIN SIZE; CURRENT-VOLTAGE CHARACTERISTIC; CHARGE-TRANSPORT MECHANISM;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work we have studied the structural and electrophysical properties of the ZnTe/CdTe heterojunctions, obtained by the method of thermal evaporation in quasi-closed volume. Investigations allowed to define the films structural parameters, such as texture, lattice constant, sizes of grains and coherent-scattering domains, micro-deformation level, and their dependence on the conditions of films production as well. Electrophysical investigations allowed to define the charge-transport mechanism in heterojunction.
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页数：10
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