ZnTe/CdTe THIN-FILM HETEROJUNCTIONS

被引：0

作者：

Kolesnyk, M. M. ^{[1
]}

Opanasyuk, A. S. ^{[1
]}

Tyrkusova, N. V. ^{[1
]}

Danilchenko, S. N. ^{[2
]}

机构：

[1] Sumy State Univ, 2 Rimsky Korsakov Str, UA-40007 Sumy, Ukraine

[2] Natl Acad Sci Ukraine, Inst Appl Phys, UA-40030 Sumy, Ukraine

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2009年 / 1卷 / 02期

关键词：

ZnTe/CdTe HETEROJUNCTIONS; STRUCTURE FACTOR; GRAIN SIZE; CURRENT-VOLTAGE CHARACTERISTIC; CHARGE-TRANSPORT MECHANISM;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we have studied the structural and electrophysical properties of the ZnTe/CdTe heterojunctions, obtained by the method of thermal evaporation in quasi-closed volume. Investigations allowed to define the films structural parameters, such as texture, lattice constant, sizes of grains and coherent-scattering domains, micro-deformation level, and their dependence on the conditions of films production as well. Electrophysical investigations allowed to define the charge-transport mechanism in heterojunction.

引用

页数：10

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