SYNTHETIC DIAMOND-BASED DETECTOR OF IONIZED RADIATION

被引：3
|
作者：
ROMANKO, LA
GONTAR, AG
机构：
[1] Institute for Superhard Materials, Ukrainian Academy of Sciences Kiev
来源：
DIAMOND AND RELATED MATERIALS | 1994年 / 3卷 / 03期
关键词：
Charge carriers - Electric properties - Impurities - Radiation;
D O I：
10.1016/0925-9635(94)90089-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Consideration is given to the influence of the non-uniform zonal-sectorial distribution of impurities on the electrical properties of synthetic diamond. It is shown that specific conditions of synthesis are responsible for the specific impurity-defect structure of crystals. A nitrogen concentration up to 2 x 10(19) cm has no critical effect on the kinetic parameters of charge carrier transfer. It is found that, to ensure a detector's sensitivity, a space charge should be accumulated at traps having an activation energy of 1.3-1.6 eV.
引用
收藏
页码：259 / 263
页数：5
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