SYNTHETIC DIAMOND-BASED DETECTOR OF IONIZED RADIATION

Consideration is given to the influence of the non-uniform zonal-sectorial distribution of impurities on the electrical properties of synthetic diamond. It is shown that specific conditions of synthesis are responsible for the specific impurity-defect structure of crystals. A nitrogen concentration up to 2 x 10(19) cm has no critical effect on the kinetic parameters of charge carrier transfer. It is found that, to ensure a detector's sensitivity, a space charge should be accumulated at traps having an activation energy of 1.3-1.6 eV.