TEMPERATURE-DEPENDENCE OF ELECTRON-BEAM-INDUCED CURRENT IMAGE OF SEMIINSULATING UNDOPED LIQUID-ENCAPSULATED CZOCHRALSKI GAAS

被引：0
|
作者：
TOKUMARU, Y
机构：
[1] Chuo University, Kasuga, Bunkyo-ku, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11A期
关键词：
EBIC; EBIC CONTRAST; TEMPERATURE DEPENDENCE OF EBIC; SEMIINSULATING GAAS; CELL STRUCTURE;
D O I：
10.1143/JJAP.30.2970
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semi-insulating undoped liquid-encapsulated Czochralski GaAs was investigated by the electron-beam-induced current method. It is found that defects which cannot be observed at room temperature become visible when the temperature is raised to about 350 K. A simple theoretical consideration on this experimental result was performed.
引用
收藏
页码：2970 / 2971
页数：2
相关论文
共 50 条
  • [31] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN ELECTRON-BEAM-PUMPED LASERS USING N-TYPE GAAS
    PARUI, DP
    CHAKRAVARTI, AN
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1973, 11 (08) : 588 - 590
  • [32] CHARACTERIZATION OF GAAS WAFERS AND EPILAYERS WITH ELECTRON-BEAM-INDUCED CURRENT, ETCHING, AND REFLECTED LIGHT
    PARTAIN, LD
    DEAN, SM
    BERARD, BL
    MCLEOD, PS
    FRAAS, LM
    CAPE, JA
    SHELDON, P
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4248 - 4254
  • [33] ENERGY-DEPENDENCE AND DEPTH DISTRIBUTION OF ELECTRON-BEAM-INDUCED DAMAGE IN GAAS/ALGAAS HETEROSTRUCTURES
    TANAKA, N
    ISHIKAWA, T
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (03) : 341 - 346
  • [34] Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs
    Fluegel, B.
    Rice, A. D.
    Mascarenhas, A.
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (17)
  • [35] INTERNAL-STRESS DISTRIBUTION ESTIMATION IN LIQUID-ENCAPSULATED CZOCHRALSKI GROWN GAAS SINGLE-CRYSTALS USING MEASURED TEMPERATURE ON DUMMY CRYSTALS
    NISHIO, J
    YASUNAGA, T
    NAKATA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02): : 716 - 721
  • [36] TEMPERATURE-DEPENDENCE OF ELECTRON-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON
    HOEHL, D
    HEERA, V
    BARTSCH, H
    WOLLSCHLAGER, K
    SKORUPA, W
    VOELSKOW, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 122 (01): : K35 - K37
  • [37] ELECTRON-DIFFUSION LENGTHS IN LIQUID-PHASE EPITAXIAL P-GAAS-GE LAYERS DETERMINED BY ELECTRON-BEAM-INDUCED CURRENT METHOD
    SHEN, CC
    PANDE, KP
    PEARSON, GL
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1236 - 1237
  • [38] COMPARATIVE STUDIES OF DEFECTS IN GAAS ON SILICON SUBSTRATES USING ELECTRON-BEAM-INDUCED CURRENT AND TRANSMISSION ELECTRON-MICROSCOPY
    HUMPHREYS, TP
    HAMAGUCHI, N
    BEDAIR, SM
    TARN, JCL
    ELMASRY, N
    RADZIMSKI, ZJ
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3763 - 3765
  • [39] Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode
    Yuan, Zhizhong
    Li, Dongsheng
    Wang, Minghua
    Gong, Daoren
    Fan, Ruixin
    Yang, Deren
    VACUUM, 2008, 82 (11) : 1337 - 1340
  • [40] HIGH-RESOLUTION ELECTRON-BEAM-INDUCED CURRENT MEASUREMENTS IN AN SCANNING TUNNELING MICROSCOPE ON GAAS-MESFET
    KOSCHINSKI, P
    DWORAK, V
    BALK, LJ
    SCANNING MICROSCOPY, 1994, 8 (02) : 175 - 180
12345