TEMPERATURE-DEPENDENCE OF ELECTRON-BEAM-INDUCED CURRENT IMAGE OF SEMIINSULATING UNDOPED LIQUID-ENCAPSULATED CZOCHRALSKI GAAS

被引：0

作者：

TOKUMARU, Y

机构：

[1] Chuo University, Kasuga, Bunkyo-ku, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11A期

关键词：

EBIC; EBIC CONTRAST; TEMPERATURE DEPENDENCE OF EBIC; SEMIINSULATING GAAS; CELL STRUCTURE;

D O I：

10.1143/JJAP.30.2970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semi-insulating undoped liquid-encapsulated Czochralski GaAs was investigated by the electron-beam-induced current method. It is found that defects which cannot be observed at room temperature become visible when the temperature is raised to about 350 K. A simple theoretical consideration on this experimental result was performed.

引用

页码：2970 / 2971

页数：2

共 50 条

[21] THE SPATIAL-DISTRIBUTION OF DEEP CENTERS IN SEMIINSULATING GAAS MEASURED BY MEANS OF ELECTRON-BEAM-INDUCED CURRENT TRANSIENT SPECTROSCOPY
TESSNOW, T
SCHOENBACH, KH
ROUSH, RA
BRINKMANN, RP
THOMAS, L
GERMER, RKF
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 801 - 806
[22] COMPOSITION DEPENDENCE OF LATTICE SPACING FOR LOW DISLOCATION DENSITY UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GAAS CRYSTALS
USUDA, K
YASUAMI, S
FUJII, T
HIGASHI, Y
KAWATA, H
ANDO, M
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 182 - 184
[23] CHARACTERIZATION OF LEC GAAS BY ELECTRON-BEAM-INDUCED CURRENT ANALYSIS
FRIGERI, C
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (1-2): : 175 - 179
[24] DEEP ELECTRON TRAPS IN UNDOPED SEMI-INSULATING GAAS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD
IMAMURA, Y
OSAKA, J
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L333 - L335
[25] CATHODOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF SINGLE DISLOCATIONS IN GAAS
WOSINSKI, T
ZOZIME, A
RIVIERE, A
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 24 (1-3): : 112 - 114
[26] ROLE OF ELECTRON TRAPS ON THE THERMAL-CONVERSION AND ITS SUPPRESSION FOR LIQUID-ENCAPSULATED CZOCHRALSKI GAAS SINGLE-CRYSTALS
CHICHIBU, S
OHKUBO, N
MATSUMOTO, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1989, 28 (10): : 1750 - 1755
[27] GROWTH CONDITION DEPENDENCE OF EL2 CONCENTRATIONS IN MAGNETIC-FIELD APPLIED LIQUID-ENCAPSULATED CZOCHRALSKI GAAS CRYSTALS
TERASHIMA, K
YAHATA, A
FUKUDA, T
JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 982 - 984
[28] Internal stress distribution estimation in liquid-encapsulated Czochralski grown GaAs single crystals using measured temperature on dummy crystals
Nishio, Johji, 1600, (32):
[29] INFRARED SPECTROPHOTOMETRY OF CARBON-INDUCED LOCALIZED VIBRATIONAL-MODE IN INDIUM-DOPED LIQUID-ENCAPSULATED CZOCHRALSKI GAAS
KITAGAWARA, Y
ITOH, T
NOTO, N
TAKENAKA, T
APPLIED PHYSICS LETTERS, 1986, 48 (12) : 788 - 790
[30] FOURIER-TRANSFORM INFRARED-ABSORPTION STUDIES OF INTRACENTER TRANSITIONS IN THE EL2 LEVEL IN SEMIINSULATING BULK GAAS GROWN WITH THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE
MANASREH, MO
COVINGTON, BC
PHYSICAL REVIEW B, 1987, 35 (05): : 2524 - 2527

← 1 2 3 4 5 →