TEMPERATURE-DEPENDENCE OF CONDUCTIVITY OF SI-P NEAR THE METAL-INSULATOR-TRANSITION

被引:13
|
作者
PHILLIPS, JC
机构
[1] T Bell Laboratories, Murray Hill, NJ
来源
EUROPHYSICS LETTERS | 1991年 / 14卷 / 04期
关键词
D O I
10.1209/0295-5075/14/4/014
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In the regimes T approximately less-than 0.1 K and 0 < (n - n(c))/n(c) approximately less-than 10-2 the conductivity DELTA-sigma(n, T) of Si: P is proportional to T1/2. Using quantum percolation theory I explain this behavior in terms of elementary fluctuation theory without appeal to electron-electron interactions.
引用
收藏
页码:367 / 370
页数:4
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