TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY AND THE SUSCEPTIBILITY IN METALLIC SI-P REANALYZED FROM THE PARAMAGNON POINT-OF-VIEW

被引：2

|

作者：

BEALMONOD, MT

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.36.3665

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：3665 / 3674

页数：10

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[4] TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY DUE TO DIRECT INTERBAND-TRANSITIONS IN P-SI
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