A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

被引：2

作者：

Wang Honglai ^{[1
]}

Zhang Xiaoxing ^{[1
]}

Dai Yujie ^{[1
]}

Lu Yingjie ^{[1
]}

Matsuoka, Toshimasa ^{[2
]}

Wang Jun ^{[2
]}

Taniguchi, Kenji ^{[2
]}

机构：

[1] Nankai Univ, Inst Microelectron, Tianjin 300457, Peoples R China

[2] Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 08期

关键词：

bandgap reference; CMOS; subthreshold;

D O I：

10.1088/1674-4926/32/8/085009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion, without the need for any bipolar transistors. The voltage reference is designed and fabricated by a 0.18 mu m CMOS process. The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/degrees C at a 0.8 V supply voltage over the temperature range of -35 to 85 degrees C and a 0.1% variation in supply voltage from 0.8 to 3 V. Furthermore, the supply current is only 1.5 mu A at 0.8 V supply voltage.

引用

页数：4

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