COMPARISON OF QUASI-STATIC AND NON-QUASI-STATIC CAPACITANCE MODELS FOR THE 4-TERMINAL MOSFET

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作者：

CHAI, KW

PAULOS, JJ

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来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：377 / 379

页数：3

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