COMPARISON OF QUASI-STATIC AND NON-QUASI-STATIC CAPACITANCE MODELS FOR THE 4-TERMINAL MOSFET

被引：0
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作者：
CHAI, KW
PAULOS, JJ
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：377 / 379
页数：3
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