COMPARISON OF QUASI-STATIC AND NON-QUASI-STATIC CAPACITANCE MODELS FOR THE 4-TERMINAL MOSFET

被引：0

|

作者：

CHAI, KW

PAULOS, JJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：377 / 379

页数：3

相关论文

共 50 条

[1] HARMONIC DISTORTION OF THE 4-TERMINAL MOSFET IN NON-QUASI-STATIC OPERATION
PU, LJ
TSIVIDIS, YP
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1990, 137 (05): : 325 - 332
[2] IMPROVING THE NON-QUASI-STATIC WEAK-TO-STRONG-INVERSION 4-TERMINAL MOSFET MODEL
BAGHERI, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2558 - 2560
[3] SMALL-SIGNAL PARAMETERS AND THERMAL NOISE OF THE 4-TERMINAL MOSFET IN NON-QUASI-STATIC OPERATION
PU, LJ
TSIVIDIS, Y
SOLID-STATE ELECTRONICS, 1990, 33 (05) : 513 - 521
[4] Extracting a General Distortion Contribution Model from Quasi-Static and Non-Quasi-Static Models
Aikio, Janne P.
Rahkonen, Timo
Pedro, Jose Carlos
2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), 2014, : 241 - 244
[5] UNIFIED QUASI-STATIC MOSFET CAPACITANCE MODEL
RHO, KM
LEE, K
SHUR, M
FJELDLY, TA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 131 - 136
[6] A Non-Quasi-Static SOI MOSFET Model
Burke, Darren R.
Brazil, Thomas J.
2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 290 - 293
[7] A comparison of non-quasi-static and quasi-static harmonic balance implementations for coupled device and circuit simulation
Hu, YT
Mayaram, K
PROCEEDINGS OF THE IEEE 2003 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2003, : 99 - 102
[8] A CAD-compatible non-quasi-static MOSFET model
Liu, W
Bowen, C
Chang, MC
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 151 - 154
[9] A NON-QUASI-STATIC MOSFET MODEL FOR SPICE AC ANALYSIS
PARK, HJ
KO, PK
HU, CM
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1992, 11 (10) : 1247 - 1257
[10] A NON-QUASI-STATIC MOSFET MODEL FOR SPICE - TRANSIENT ANALYSIS
PARK, HJ
KO, PK
HU, CM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) : 561 - 576

← 1 2 3 4 5 →